Publications

2022

3D Integration Technology for Quantum Computer based on Diamond Spin Qubits

R. Ishihara, J. Hermias, S. Yu, K. Y. Yu, Y. Li, S. Nur, T. Iwai, T. Miyatake, K. Kawaguchi, Y. Doi and S. Sato

International Electron Device Meeting (IEDM)

https://doi.org/10.1109/IEDM19574.2021.9720552

2021

Wafer-level direct bonding of optimized superconducting NbN for 3D chip integration

Li, Y, Gheytaghi, AM, Trifunovic, M, Xu, Y, Zhang, GQ & Ishihara, R

Physica C: Superconductivity and its Applications, vol. 582, 1353823.

doi.org/10.1016/j.physc.2021.1353823

2020

Integration of single crystal diamond photonic crystal on silicon substrate for quantum computer

Toshiki Iwai, Oscar Tenorio Pearl, Ryoichi Ishihara

Hasselt Diamond Workshop

Temperature dependence of hole transport properties through physically defined silicon quantum dots

Shimatani, N, Yamaoka, Y, Ishihara, R, Andreev, A, Williams, DA, Oda, S & Kodera, T

Applied Physics Letters, vol. 117, no. 9, 094001, pp. 094001-1 - 094001-5

doi.org/10.1063/5.0010981

Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures

Hiraoka, S, Horibe, K, Ishihara, R, Oda, S & Kodera, T

Applied Physics Letters, vol. 117, no. 7, 074001

doi.org/10.1063/5.0010906

On-chip integration of Si/SiGe-based quantum dots and switched-capacitor circuits

Xu, Y, Unseld, FK, Corna, A, Zwerver, AMJ, Sammak, A, Brousse, D, Samkharadze, N, Amitonov, SV, Veldhorst, M, Scappucci, G, Ishihara, R & Vandersypen, LMK

Applied Physics Letters, vol. 117, no. 14, 144002

doi.org/10.1063/5.0012883

2019

Diamond colour centers for quantum internet and sensors

Tenorio Pearl, O., Mouris, R., & Ishihara, R.

Maxwell-periodiek der electrotechnische vereeniging, 22(3), 26-29

2018

A Si/SiGe based quantum dot with floating gates for scalability

Y.Xu, A. Corna, N. Samkharadze, M. Veldhorst, R. Ishihara and L. M. K.Vandersypen

Silicon Quantum Electronics Workshop 2018 13th ‐15th of November 2018 Sydney, Australia

Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material

Alfaro, J. A., Sberna, P. M., Silvestri, C., Mastrangeli, M., Ishihara, R. & Sarro, P. M.

2018 IEEE Micro Electro Mechanical Systems, MEMS 2018. Piscataway, NJ: IEEE, Vol. 2018-January. p. 547-550 4 p.

2017

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

L. M. K. Vandersypen, H. Bluhm, J. S. Clarke, A. S. Dzurak, R. Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber and M. Veldhorst

npj Quantum Information, 3, Article number 34 (2017)

doi:10.1038/s41534-017-0038-y

Cryogenic DRAM-based voltage controller integrated with Si/SiGe quantum dot

Miki Trifunovic, Andrea Corna, Nodar Samkharadze, Lieven Vandersypen, Ryoichi Ishihara

Quantum Electronics Workshop

Publications

3D Integration Technology for Quantum Computer based on Diamond Spin Qubits

Wafer-level direct bonding of optimized superconducting NbN for 3D chip integration

Integration of single crystal diamond photonic crystal on silicon substrate for quantum computer

Temperature dependence of hole transport properties through physically defined silicon quantum dots

Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures

On-chip integration of Si/SiGe-based quantum dots and switched-capacitor circuits

Diamond colour centers for quantum internet and sensors

A Si/SiGe based quantum dot with floating gates for scalability

Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

Cryogenic DRAM-based voltage controller integrated with Si/SiGe quantum dot

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