1. A single hole spin qubit
    W. Hendrickx, W. I. L. Lawrie, L. Petit, S. A. Sammak, G. Scappucci, and M. Veldhorst.
  2. Quantum Dot Arrays in Silicon and Germanium
    I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx, J. M. Boter, L. Petit, S. Amitonov, M. Lodari, B. Paquelet-Wutz, C. Volk, S. Phillips, G. Droulers, N. Kalhor, D. Brousse, A. Sammak, L.M.K. Vandersypen, G. Scappucci, and M. Veldhorst.
  3. Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures.
    P. Wuetz, P.L. Bavdaz, L.A. Yeoh, R. Schouten, H. van der Does, M. Tiggelman, D. Sabbagh, A. Sammak, C.G. Almudever, F. Sebastiano, J.S. Clarke, M. Veldhorst, and G. Scappucci.
  4. Hendrickx, D. Franke, A. Sammak, G. Scappucci, and M. Veldhorst.
    Fast two-qubit logic with holes in germanium.
    Nature 577, 487-491 (2020)
  5. Light effective hole mass in undoped Ge/SiGe quantum wells.
    Lodari, A. Tosato, D. Sabbagh, M. Schubert, G. Capellini, A. Sammak, M. Veldhorst, and G. Scappucci.
    Physical Review 100, 041304(R) (2019)
  6. Ballistic superconductivity and tunable p-junctions in InSb quantum wells.
    T. Ke, C.M. Moehle, F.K. de Vries, C. Thomas, S. Metti, C.R. Guinn, R. Kallaher, M. Lodari, G. Scappucci, T. Wang, R.E. Diaz, G.C. Gardner, M.J. Manfra, and S. Goswami.
    Nature Communications 10, 3764 (2019)
  7. Quantum Transport Properties of Industrial 28Si/28SiO.
    Sabbagh, N. Thomas, J. Torres, R. Pillarisetty, P. Amin, H.C. George, K. Singh, A. Budrevich, M. Robinson, D. Merrill, L. Ross, J. Roberts, L. Lampert, L. Massa, S.V. Amitonov, J.M. Boter, G. Droulers, H.G.J. Eenink, M. van Hezel, D. Donelson, M. Veldhorst, L.M.K. Vandersypen, J.S. Clarke, and G. Scappucci.
    Physical Review Applied 12, 014013 (2019).
  8. Rapid gate-based spin read-out in silicon using an on-chip resonator.
    Zheng, N. Samkharadze, M.L. Noordam, N. Kalhor, D. Brousse, A. Sammak, G. Scappucci, and L.M.K. Vandersypen.
    Nature Nanotechnology 14, 742 (2019).
  9. Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium.
    W. Hendrickx, M.L.V. Tagliaferri, M. Kouwenhoven, R. Li, D.P. Franke, A. Sammak, A. Brinkman, G. Scappucci, and M. Veldhorst.
    Physical Review B 99, (2019).
  10. Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers.
    Vigneau, R. Mizokuchi, D.C. Zanuz, X. Huang, S. Tan, R. Maurand, S. Frolov, A. Sammak, G. Scappucci, F. Lefloch, and S.D. Franceschi. Nano Letters 19, 1023 (2019).
  11. Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology.
    Sammak, D. Sabbagh, N.W. Hendrickx, M. Lodari, B.P. Wuetz, A. Tosato, L. Yeoh, M. Bollani, M. Virgilio, M.A. Schubert, P. Zaumseil, G. Capellini, M. Veldhorst, and Scappucci.
    Advanced Functional Materials 1807613 (2019).
  12. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration.
    Porret, A. Hikavyy, J.F.G. Granados, S. Baudot, A. Vohra, B. Kunert, B. Douhard, J. Bogdanowicz, M. Schaekers, D. Kohen, J. Margetis, J. Tolle, L.P.B. Lima, A. Sammak, G. Scappucci, E. Rosseel, R. Langer, and R. Loo.
    ECS Journal of Solid State Science and Technology 8, P392 (2019).
  13. Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS.
    van Staveren, C. García Almudever, G. Scappucci, M. Veldhorst, M. Babaie, E. Charbon, F. Sebastiano.
    ESSCIRC 2019 – IEEE 45th European Solid State Circuits Conference (ESSCIRC), 37-40 (2019)
  14. Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology.
    Pillarisetty, N. Thomas, H. George, K. Singh, J. Roberts, L. Lampert, P. Amin, T. Watson, G. Zheng, J. Torres, and others.
    Technical Digest-International Electron Devices Meeting, IEDM (2019).
  15. Gate-controlled quantum dots and superconductivity in planar germanium.
    W. Hendrickx, D.P. Franke, A. Sammak, M. Kouwenhoven, D.S. D, L.Y. L, R. Li, M.L.V. Tagliaferri, M. Virgilio, G. Capellini, G. Scappucci, and M. Veldhorst.
    Nature Communications 2835 (2018).
  16. Strong spin-photon coupling in silicon.
    Samkharadze, G. Zheng, N. Kalhor, D. Brousse, A. Sammak, U.C. Mendes, A. Blais, G. Scappucci, and L.M.K. Vandersypen.
    Science 359, 1123 (2018).
  17. Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration.
    Porret, A. Hikavyy, J. F. Gomez Granados, S. Baudot, A. Vohra, B. Kunert, B. Douhard, J. Bogdanowicz, M. Schaekers, D. Kohen, J. Margetisc, J Tolle, Luca Lima, Amir Sammak, G. Scappucci, E. Rosseel, R. Langer, and R. Loo.
    ECS Transactions 86, 163 (2018).
  18. Photoluminescence of phosphorus atomic layer doped Ge grown on Si.
    Yamamoto, L.-W. Nien, G. Capellini, M. Virgilio, I. Costina, M.A. Schubert, W. Seifert, A. Srinivasan, R. Loo, G. Scappucci, D. Sabbagh, A. Hesse, J. Murota, T. Schroeder, and B. Tillack.
    Semiconductor Science and Technology 32, 104005 (2017).
  19. Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.
    Shamim, S. Mahapatra, G. Scappucci, W.M. Klesse, M.Y. Simmons, and A. Ghosh.
    Scientific Reports 7, 46670 (2017).
  20. Quantum computing within the framework of advanced manufacturing
    S. Clarke, N. Thomas, J. Roberts, R. Pilliarisetty, Z. Yoscovits, R. Caudillo, H. George, K.J. Singh, D. Michalak, P. Amin, A. Mei, A. Bruno, S. Poletto, J. Boter, G. Droulers, N. Kalhor, N. Samkharadze, J.P. Dehollain, L. Yeoh, A. Sammak, G. Scappucci, M. Veldhorst, L. DiCarlo, and L.M.K. Vandersypen.
    2016 IEEE International Electron Devices Meeting (IEDM). (2016).
  21. Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers.
    Calandrini, T. Venanzi, F. Appugliese, M. Badioli, V. Giliberti, L. Baldassarre, P. Biagioni, F.D. Angelis, W.M. Klesse, G. Scappucci, and M. Ortolani.
    Applied Physics Letters 109, 121104 (2016).