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Publications

  1. Electrical Control of Uniformity in Quantum Dot Devices
    M. Meyer, C. Déprez, T.R. van Abswoude, I.N. Meijer, D. Liu, C-A Wang, S. Karwal, S. Oosterhout, F. Borsoi, A. Sammak, N.W. Hendrickx, G. Scappucci, M. Veldhorst
    Nano Lett. 2023, 23, 7, 2522–2529
  2. Shared control of a 16 semiconductor quantum dot crossbar array
    F. Borsoi, N.W. Hendrickx, V. John, S. Motz, F. van Riggelen, A. Sammak, S.L. de Snoo, G. Scappucci, M. Veldhorst
    Nature Nanotechnology (2023)

  3. Germanium wafers for strained quantum wells with low disorder
    L.E.A Stehouwer, A. Tosato, D. Degli Esposti, D. Costa, M. Veldhorst, A. Sammak, G. Scappucci
    Appl. Phys. Lett. 123, 092101 (2023)

  4. Probing resonating valence bonds on a programmable germanium quantum simulator
    C.A. Wang, C. Déprez, H. Tidjani, W.I.L. Lawrie, N.W. Hendrickx, A. Sammak, G. Scappucci, M. Veldhorst
    npj Quantum information 9, Article number: 58 (2023)
  5. Hard superconducting gap in a high-mobility semiconductor
    A. Tosato, V. Levajac, J.Y. Wang, C.J. Boor, F. Borsoi, M. Botifoll, C.N. Borja, S. Marti-Sanchez, J. Arbiol, A. Sammak, M. Veldhorst, G. Scappucci
    Nature Communication Materials, 4, Article number: 23 (2023)
  6. Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold
    W. I. L. Lawrie, M. Rimbach-Russ, F. van Riggelen, N. W. Hendrickx, S. L. de Snoo, A. Sammak, G. Scappucci, J. Helsen & M. Veldhorst
    Nature communications 4, Article number: 3617 (2023)
  7. Quantum logic with spin qubits crossing the surface code threshold
    X. Xue, M. Russ, N. Samkharadze, B. Undseth, A. Sammak, G. Scappucci, and L. M. Vandersypen
    Nature, 601(7893):343–347, (2022)
  8. A high-mobility hole bilayer in a germanium double quantum well
    Tosato, B. M. Ferrari, A. Sammak, A. R. Hamilton, M. Veldhorst,
    ArXiv preprint arXiv:2201.06862, (2022)
  9. A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
    A. Noiri, K. Takeda, T. Nakajima, T. Kobayashi, A. Sammak, G. Scap- pucci, and S. Tarucha
    ArXiv preprint arXiv:2202.01357, (2022)
  10. Fast universal quantum gate above the fault- tolerance threshold in silicon
    A. Noiri, K. Takeda, T. Nakajima, T. Kobayashi, A. Sammak, G. Scappucci, and S. Tarucha
    Nature, 601(7893):338–342, (2022)
  11. Wafer-scale low-disorder 2DEG in $ˆ 28 $Si/SiGe passivated by dichlorosilane
    D. D. Esposti, B. P. Wuetz, V. Fezzi, M. Lodari, A. Sammak, and G. Scappucci
    ArXiv:2202.08090 (2022)
  12. A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
    P. Bavdaz, H. Eenink, J. van Staveren, M. Lodari, C. Almudever, J. Clarke, F. Sebastiano, M. Veldhorst, and G. Scappucci
    ArXiv preprint arXiv:2202.04482, (2022).
  13. Qubits made by advanced semiconductor manufacturing
    A. Zwerver, T. Kr¨ahenmann, T. Watson, L. Lampert, H. C. George, R. Pil- larisetty, S. Bojarski, P. Amin, S. Amitonov, J. Boter, et al
    ArXiv preprint arXiv:2101.12650 (2021)
  14. Computing with spin qubits at the surface code error threshold
    X. Xue, M. Russ, N. Samkharadze, B. Undseth, A. Sammak, G. Scappucci, and L. M. Vandersypen
    ArXiv preprint arXiv:2107.00628, (2021)
  15. Cmos-based cryogenic control of silicon quantum circuits
    X. Xue, B. Patra, J. P. van Dijk, N. Samkharadze, S. Subramanian, A. Corna, B. Paquelet Wuetz, C. Jeon, F. Sheikh, E. Juarez-Hernandez, et al.
    Nature, 593(7858):205–210, (2021).
  16. Atomic fluctuations lifting the energy degeneracy in si/sige quantum dots
    B. P. Wuetz, M. P. Losert, S. Koelling, L. E. Stehouwer, A.-M. J. Zwerver, S. G. Philips, M. T. Madzik, X. Xue, G. Zheng, M. Lodari, et al.
    Nature Communications volume 13, 7730 (2022
  17. A two-dimensional array of single-hole quantum dots
    F. Van Riggelen, N. Hendrickx, W. Lawrie, M. Russ, A. Sammak, G. Scap- pucci, and M. Veldhorst
    Applied Physics Letters, 118(4):044002, (2021)
  18. Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars
    G. Scappucci, P. Taylor, J. Williams, T. Ginley, and S. Law.
    MRS Bulletin, 46(7):596–606, (2021)
  19. The germanium quantum information route
    G. Scappucci, C. Kloeffel, F. A. Zwanenburg, D. Loss, M. Myronov, J.-J. Zhang, S. De Franceschi, G. Katsaros, and M. Veldhorst
    Nature Reviews Materials, 6(10):926– 943, (2021)
  20. Semiconductor materials stacks for quantum dot spin qubits
    G. Scappucci
    ArXiv preprint arXiv:2102.10897, (2021)
  21. Single-hole pump in germanium
    A. Rossi, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, and M. Kataoka
    Journal of Physics D: Ap- plied Physics, 54(43):434001, (2021)
  22. A 6-to-8ghz 0.17 mw/qubit cryo-cmos receiver for multiple spin qubit readout in 40nm cmos technology
    B. Prabowo, G. Zheng, M. Mehrpoo, B. Patra, P. Harvey-Collard, J. Di- jkema, A. Sammak, G. Scappucci, E. Charbon, F. Sebastiano, et al.
    IEEE International Solid-State Circuits Conference (ISSCC), volume 64, pages 212–214. (2021)
  23. Coherent multiqubit operations in a six quantum dot linear array
    S. Philips, M. Madzik, M. Russ, S. Amitonov, D. Brousse, A. Sammak, G. Scappucci, and L. Vandersypen
    Bulletin of the American Physical Society, 66, (2021)
  24. Insbas two- dimensional electron gases as a platform for topological superconductivity
    C. M. Moehle, C. T. Ke, Q. Wang, C. Thomas, D. Xiao, S. Karwal, M. Lo- dari, V. van de Kerkhof, R. Termaat, G. C. Gardner, et al.
    Nano letters, 21(23):9990–9996, (2021)
  25. Valley splitting in silicon from the interference pattern of quantum oscillations
    M. Lodari, L. Lampert, R. Pillarisetty, J. Clarke, and G. Scappucci
    Phys. Rev. Lett. 128, 176603 –(2022)
  26. Lightly-strained germanium quantum wells with hole mobility exceeding one million
    M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. Hamilton, and G. Scappucci
    Applied Phys letter 120, 122104 (2022)
  27. Low percolation density and charge noise with holes in germanium
    M. Lodari, N. W. Hendrickx, W. I. Lawrie, T.-K. Hsiao, L. M. Vandersypen, A. Sammak, M. Veldhorst, and G. Scappucci
    Materials for Quantum Technology, 1(1):011002, (2021)
  28. Simultaneous driving of semi- conductor spin qubits at the fault-tolerant threshold
    W. Lawrie, M. Russ, F. van Riggelen, N. Hendrickx, S. de Snoo, A. Sam- mak, G. Scappucci, and M. Veldhorst
    Nature Communications 14, Article number: 3617 (2023)
  29. A four-qubit germanium quantum processor
    W. Hendrickx, W. I. Lawrie, M. Russ, F. van Riggelen, S. L. de Snoo, R. N. Schouten, A. Sammak, G. Scappucci, and M. Veldhorst
    Nature, 591(7851):580–585, (2021)
  30. Circuit quantum electrodynamics with two remote electron spins
    Harvey-Collard, J. Dijkema, G. Zheng, A. Sammak, G. Scappucci, and L. M. Vandersypen
    ArXiv preprint arXiv:2108.01206, (2021)
  31. Electron–hole superfluidity in strained si/ge type ii heterojunctions
    S. Conti, S. Saberi-Pouya, A. Perali, M. Virgilio, F. M. Peeters, A. R. Hamilton, G. Scappucci, and D. Neilson
    NQuantum Materials, 6(1):1–7, (2021)
  32. Enhancement of proximity-induced superconductivity in a planar gehole gas
    K. Aggarwal, A. Hofmann, D. Jirovec, I. Prieto, A. Sammak, M. Boti- foll, S. Mart´ı-S´anchez, M. Veldhorst, J. Arbiol,
    G. Scappucci, et al
    Physical Review Research, 3(2):L022005, (2021)
  33. On-chip integration of si/sige-based quantum dots and switched-capacitor circuits
    Xu, F. Unseld, A. Corna, A. Zwerver, A. Sammak, D. Brousse, N. Samkharadze, S. Amitonov, M. Veldhorst, G. Scappucci
    Applied Physics Letters, 117(14):144002, (2020)
  34. Effect of quantum hall edge strips on valley splitting in silicon quantum wells
    B. P. Wuetz, M. P. Losert, A. Tosato, M. Lodari, P. L. Bavdaz, L. Ste-houwer, P. Amin, J. S. Clarke, S. N. Coppersmith,
    A. Sammak, et al
    Physical review letters, 125(18):186801, (2020)
  35. A scalable cryo-cmos controller for the wideband frequency-multiplexed control of spin qubits and transmons
    P. G. Van Dijk, B. Patra, S. Subramanian, X. Xue, N. Samkharadze, A. Corna, C. Jeon, F. Sheikh, E. Juarez-Hernandez, B. P. Esparza, et al.
    IEEE Journal of Solid-State Circuits, 55(11):2930–2946, (2020)
  36. 19.1 a scalable cryo-cmos 2-to-20ghz digitally intensive controller for 4 32 frequency multiplexed spin qubits/transmons in 22nm finfet technology for quantum computers
    B. Patra, J. P. van Dijk, S. Subramanian, A. Corna, X. Xue, C. Jeon, Sheikh, E. Juarez-Hernandez, B. P. Esparza,
    H. Rampurawala, et al.
    2020 IEEE International Solid-State Circuits Conference-(ISSCC), pages 304–306. IEEE, (2020)
  37. A scalable multi-channel cryogenic controller for spin qubits/transmons with frequency multiplexing capability implemented in intel 22nm finfet technology
    Patra, J. PG van Dijk, S. Subramanian, A. Corna, X. Xue, C. Jeon, F. Sheikh, E. Juarez Hernandez, B. Perez Esparza, H. Rampurawala, et al.
    Bulletin of the American Physical Society, 65, (2020)
  38. Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
    W. I. L. Lawrie, N. W. Hendrickx, F. van Riggelen, M. Russ, L. Petit, A. Sammak, G. Scappucci, and M. Veldhorst
    Nano letters, 20(10):7237–7242, (2020)
  39. Quantum inspire: Qutech’s platform for co-development and collaboration in quantum computing
    T. Last, N. Samkharadze, P. Eendebak, R. Versluis, X. Xue, A. Sammak, D. Brousse, K. Loh, H. Polinder, G. Scappucci, et al.
    In Novel patterning technologies for semiconductors, MEMS/NEMS and MOEMS 2020, volume 11324, page 113240J. International Society for Optics and Photonics, (2020)
  40. Probing semiconductor heterostructures from the atomic to the micrometer scale
    S. Koelling, S. Assali, M. Atalla, A. Kumar, A. Attiaoui, M. Lodari, A. Sammak, G. Scappucci, and O. Moutanabbir
    ECS Transac- tions, 98(5):447, (2020)
  41. On-chip microwave filters for high- impedance resonators with gate-defined quantum dots
    P. Harvey-Collard, G. Zheng, J. Dijkema, N. Samkharadze, A. Sammak, G. Scappucci, and L. M. Vandersypen
    Physical Review Applied, 14(3):034025, (2020)
  42. Coupling silicon qubits via a high-impedance superconducting resonator
    P. Harvey-Collard, J. Dijkema, N. Samkharadze, D. Brousse, F. Carrasco, A. Sammak, G. Scappucci, L. Vandersypen
    Bulletin of the American Physical Society, 65, (2020)
  43. State-of-the-art quantum dot devices from a full 300mm process line: towards scalable spin qubit devices
    H. C. George, S. Bojarski, R. Pillarisetty, B. Mueller, L. Lampert, T. Wat- son, F. Luthi, R. Caudillo, D. Michalak, E. Henry
    Bulletin of the American Physical Society, 65, (2020)
  44. Vanishing zeeman energy in a two-dimensional hole gas
    P. Del Vecchio, M. Lodari, A. Sammak, G. Scappucci, and O. Moutanabbir
    Physical Review B, 102:115304, (2020)
  45. Crossbar architecture with individually addressable single electron transistors
    P. Bavdaz, G. Eenink, J. van Staveren, C. Almudever, F. Sebastiano, M. Veldhorst, and G. Scappucci
    Bulletin of the American Physical Society, 65, (2020)
  46. Enhancement of proximity induced superconductivity in planar germanium
    K. Aggarwal, A. C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M. Botifoll, S. Marti-Sanchez, M. Veldhorst, J. Arbiol, G. Scappucci,
    ArXiv, 2020.
  47. Superconductor- semiconductor devices with 2d holes in germanium
    K. Aggarwal, A. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sam- mak, M. Veldhorst, G. Scappucci, and G. Katsaros
    Bulletin of the American Physical Society, 65, (2020)
  48. Rapid gate-based spin read-out in silicon using an on-chip resonator
    G. Zheng, N. Samkharadze, M. L. Noordam, N. Kalhor, D. Brousse, A. Sammak, G. Scappucci, and L. M. Vandersypen
    Nature nanotechnology, 14(8):742–746, (2019)
  49. Embedding silicon spin qubits in superconducting circuits
    G. Zheng, N. Samkharadze, M. Noordam, N. Kalhor, D. Brousse, A. Sam- mak, U. Mendes, A. Blais, G. Scappucci, and L. Vandersypen
    Quantum Information and Measurement, pages F3B–3. Optical Society of America, (2019)
  50. Quantum transport properties of industrial si 28/si o 2 28
    D. Sabbagh, N. Thomas, J. Torres, R. Pillarisetty, P. Amin, H. George, K. Singh, A. Budrevich, M. Robinson, D. Merrill
    Physical Review Applied, 12(1):014013, (2019)
  51. High volume electrical characterization of semiconductor qubits
    R. Pillarisetty, H. George, T. Watson, L. Lampert, N. Thomas, S. Bojarski, P. Amin, R. Caudillo, E. Henry, N. Kashani
    In 2019 IEEE International Electron Devices Meeting (IEDM), pages 31–5. IEEE, (2019)
  52. Ga-doped ge and [b+ ga] co-doped sige epitaxial source-drain for sub-7 nm logic devices
    C. Porret, J. Margetis, J. Tolle, A. Sammak, G. Scappucci, L. Petersen Barbosa Lima, D. Kohen, B. Kunert, A. Hikavyy, and R. Loo.
    2018
  53. Qubit device integration using advanced semiconductor manufacturing process technology
    R. Pillarisetty, N. Thomas, H. George, K. Singh, J. Roberts, L. Lampert, P. Amin, T. Watson, G. Zheng, J. Torres, et al
    IEEE International Electron Devices Meeting (IEDM), pages 6–3. IEEE, (2018)
  54. Cryo-cmos for quantum technologies/19.1
    B. Patra, J. P. van Dijk, S. Subramanian, A. Corna, X. Xue, C. Jeon, F. Sheikh, E. Juarez-Hernandez, B. P. Esparza,
    H. Rampurawala, et al.
    Isscc 2020/session 19
  55. A single hole spin qubit
    W. Hendrickx, W. I. L. Lawrie, L. Petit, S. A. Sammak, G. Scappucci, and M. Veldhorst.
    Nature Communications 11, 3478 (2020)
  56. Quantum Dot Arrays in Silicon and Germanium
    I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx, J. M. Boter, L. Petit, S. Amitonov, M. Lodari, B. Paquelet-Wutz, C. Volk, S. Phillips, G. Droulers, N. Kalhor, D. Brousse, A. Sammak, L.M.K. Vandersypen, G. Scappucci, and M. Veldhorst.
    ArXiv:1909.06575
  57. Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures.
    P. Wuetz, P.L. Bavdaz, L.A. Yeoh, R. Schouten, H. van der Does, M. Tiggelman, D. Sabbagh, A. Sammak, C.G. Almudever, F. Sebastiano, J.S. Clarke, M. Veldhorst, and G. Scappucci.
    ArXiv:1907.11816
  58. Hendrickx, D. Franke, A. Sammak, G. Scappucci, and M. Veldhorst.
    Fast two-qubit logic with holes in germanium.
    Nature 577, 487-491 (2020)
  59. Light effective hole mass in undoped Ge/SiGe quantum wells.
    Lodari, A. Tosato, D. Sabbagh, M. Schubert, G. Capellini, A. Sammak, M. Veldhorst, and G. Scappucci.
    Physical Review 100, 041304(R) (2019)
  60. Ballistic superconductivity and tunable p-junctions in InSb quantum wells.
    T. Ke, C.M. Moehle, F.K. de Vries, C. Thomas, S. Metti, C.R. Guinn, R. Kallaher, M. Lodari, G. Scappucci, T. Wang, R.E. Diaz, G.C. Gardner, M.J. Manfra, and S. Goswami.
    Nature Communications 10, 3764 (2019)
  61. Quantum Transport Properties of Industrial 28Si/28SiO₂.
    Sabbagh, N. Thomas, J. Torres, R. Pillarisetty, P. Amin, H.C. George, K. Singh, A. Budrevich, M. Robinson, D. Merrill, L. Ross, J. Roberts, L. Lampert, L. Massa, S.V. Amitonov, J.M. Boter, G. Droulers, H.G.J. Eenink, M. van Hezel, D. Donelson, M. Veldhorst, L.M.K. Vandersypen, J.S. Clarke, and G. Scappucci.
    Physical Review Applied 12, 014013 (2019).
  62. Rapid gate-based spin read-out in silicon using an on-chip resonator.
    Zheng, N. Samkharadze, M.L. Noordam, N. Kalhor, D. Brousse, A. Sammak, G. Scappucci, and L.M.K. Vandersypen.
    Nature Nanotechnology 14, 742 (2019).
  63. Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium.
    W. Hendrickx, M.L.V. Tagliaferri, M. Kouwenhoven, R. Li, D.P. Franke, A. Sammak, A. Brinkman, G. Scappucci, and M. Veldhorst.
    Physical Review B 99, (2019).
  64. Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers.
    Vigneau, R. Mizokuchi, D.C. Zanuz, X. Huang, S. Tan, R. Maurand, S. Frolov, A. Sammak, G. Scappucci, F. Lefloch, and S.D. Franceschi.
    Nano Letters 19, 1023 (2019).
  65. Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology.
    Sammak, D. Sabbagh, N.W. Hendrickx, M. Lodari, B.P. Wuetz, A. Tosato, L. Yeoh, M. Bollani, M. Virgilio, M.A. Schubert, P. Zaumseil, G. Capellini, M. Veldhorst, and Scappucci.
    Advanced Functional Materials 1807613 (2019).
  66. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration.
    Porret, A. Hikavyy, J.F.G. Granados, S. Baudot, A. Vohra, B. Kunert, B. Douhard, J. Bogdanowicz, M. Schaekers, D. Kohen, J. Margetis, J. Tolle, L.P.B. Lima, A. Sammak, G. Scappucci, E. Rosseel, R. Langer, and R. Loo.
    ECS Journal of Solid State Science and Technology 8, P392 (2019).
  67. Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS.
     van Staveren, C. García Almudever, G. Scappucci, M. Veldhorst, M. Babaie, E. Charbon, F. Sebastiano.
    ESSCIRC 2019 – IEEE 45th European Solid State Circuits Conference (ESSCIRC), 37-40 (2019)
  68. Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology.
    Pillarisetty, N. Thomas, H. George, K. Singh, J. Roberts, L. Lampert, P. Amin, T. Watson, G. Zheng, J. Torres, and others.
    Technical Digest-International Electron Devices Meeting, IEDM (2019).
  69. Gate-controlled quantum dots and superconductivity in planar germanium.
    W. Hendrickx, D.P. Franke, A. Sammak, M. Kouwenhoven, D.S. D, L.Y. L, R. Li, M.L.V. Tagliaferri, M. Virgilio, G. Capellini, G. Scappucci, and M. Veldhorst.
    Nature Communications 2835 (2018).
  70. Strong spin-photon coupling in silicon.
    Samkharadze, G. Zheng, N. Kalhor, D. Brousse, A. Sammak, U.C. Mendes, A. Blais, G. Scappucci, and L.M.K. Vandersypen.
    Science 359, 1123 (2018).
  71. Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration.
    Porret, A. Hikavyy, J. F. Gomez Granados, S. Baudot, A. Vohra, B. Kunert, B. Douhard, J. Bogdanowicz, M. Schaekers, D. Kohen, J. Margetisc, J Tolle, Luca Lima, Amir Sammak, G. Scappucci, E. Rosseel, R. Langer, and R. Loo.
    ECS Transactions 86, 163 (2018).
  72. Photoluminescence of phosphorus atomic layer doped Ge grown on Si.
    Yamamoto, L.-W. Nien, G. Capellini, M. Virgilio, I. Costina, M.A. Schubert, W. Seifert, A. Srinivasan, R. Loo, G. Scappucci, D. Sabbagh, A. Hesse, J. Murota, T. Schroeder, and B. Tillack.
    Semiconductor Science and Technology 32, 104005 (2017).
  73. Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.
    Shamim, S. Mahapatra, G. Scappucci, W.M. Klesse, M.Y. Simmons, and A. Ghosh.
    Scientific Reports 7, 46670 (2017).
  74. Quantum computing within the framework of advanced manufacturing
    S. Clarke, N. Thomas, J. Roberts, R. Pilliarisetty, Z. Yoscovits, R. Caudillo, H. George, K.J. Singh, D. Michalak, P. Amin, A. Mei, A. Bruno, S. Poletto, J. Boter, G. Droulers, N. Kalhor, N. Samkharadze, J.P. Dehollain, L. Yeoh, A. Sammak, G. Scappucci, M. Veldhorst, L. DiCarlo, and L.M.K. Vandersypen.
    2016 IEEE International Electron Devices Meeting (IEDM). (2016).
  75. Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers.
    Calandrini, T. Venanzi, F. Appugliese, M. Badioli, V. Giliberti, L. Baldassarre, P. Biagioni, F.D. Angelis, W.M. Klesse, G. Scappucci, and M. Ortolani.
    Applied Physics Letters 109, 121104 (2016).