Ryoichi Ishihara

Ryoichi Ishihara (1967) is an associate professor in Electrical Engineering, specialized in thin-film material, devices and 3D integration. Ishihara received the PhD in Physical Electronics from Tokyo Institute of Technology (1996). After moving to TU Delft in the same year, he has established new activity of large area electronics using thin-film transistors (TFTs). He is also a visiting professor of Japan Advanced Institute of Science and Technology since 2013.

Highlights of Ishihara’s career include the first demonstration of TFTs inside large Si grain (1996), the location- and orientation-control of Si crystals (2000, 2006) by laser crystallization, the monolithic 3D-IC using single-grain TFTs (2008), the ultra-high mobility Ge TFTs (2010), and carbon nanotube vertical interconnect via’s (2013), and the first solution processed flexible Si TFTs on a plastic (2013). His current focus in QuTech is on fabrication of scalable qubit and advanced packaging technology for integration of qubit.