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Giordano Scappucci

Room F010
g.scappucci@[TUD]

Giordano Scappucci (Roma, Italy, 1977) received a MSc in Physics from “La Sapienza” University (Roma, Italy) in 2000 and a PhD in Physics from “Roma TRE” University (Roma, Italy) in 2004. During these years Giordano exploited the capabilities to grow high quality Si/Ge epitaxial layers with band engineering to make high mobility state of the art two dimensional electron gases in silicon and study quantum phenomena in in nanowires transistors.In 2005 Giordano moved as a postdoctoral fellow to the University of New South Wales, Australia, working within the Centre of Excellence for Quantum Computing Technology. He contributed to the development of a radical atomic-scale silicon device technology to fabricate devices where dopants are placed in silicon with atomic precision. In 2009, as a Senior Researcher, Giordano established a new research area at the University of New South Wales in the field of germanium-based materials and technologies. The aim was to solve critical hurdles preventing to exploit germanium to its full potential in nanoelectronics, photonics, and bio-sensing.

Giordano joins QuTech in 2015 and is excited to bring in the multidisciplinary expertise that has enabled him to span the traditional boundaries between materials (by designing and optimising crystal growth), chemistry (by understanding at the atomic-level the interactions of molecules with surfaces), and physics (by exploring electron transport). With this approach to research in mind, the overarching aim of the activities of his group at QuTech is to design, realize, and study innovative materials by the assembly of group IV elements. The goal is to tailor the structural and electronic properties of such heterostructures for applications in quantum technologies.